Spin Memory Expands Leadership Team with New Executives

Antoine Bruyns as Chief Financial Officer and Adrian Ong as Vice
President of Engineering

FREMONT, Calif.–(BUSINESS WIRE)–Spin Memory, Inc., the leading developer of embedded and stand-alone
MRAM solutions, today announced the appointment of two new members to
its leadership team. Antoine Bruyns was hired to be Spin Memory’s first
chief financial officer and Adrian Ong has joined the company as vice
president of engineering.

As chief financial officer, Antoine leads all elements of Spin Memory’s
financial planning and analysis, accounting and reporting, merger and
acquisitions, as well as investor relations. He brings 10 years of
financial capital and strategy expertise that is critical for Spin
Memory as the company transitions from focusing on research and
development to offering a full suite of MRAM solutions to the market.

Previously, Antoine was a consultant at Bain & Co and an investment
banker for J.P. Morgan managing IPOs such as DocuSign and Eventbrite,
and the acquisitions of Cavium, Ring, and Blue Bottle Coffee. He also
has a deep appreciation for entrepreneurship through his experience as
the Managing Director at Riaktr where he acted the Start-up CEO of the
company’s South African branch. Antoine earned a MBA from UC Berkeley’s
Haas School of Business, a Bachelors in Business Engineering from the
Université Libre de Bruxelles, along with both Bachelors and Masters
degrees in Electrical Engineering and Computer Sciences from Ecole
Polytechnique de Bruxelles.

As vice president of engineering, Adrian Ong is responsible for MRAM
design and product development for Spin’s embedded and standalone memory
technologies. Adrian brings nearly 30 years of experience in advanced
semiconductor memory design and development, with a proven track record
of developing new designs from concept to high volume production.

Previously, Adrian was VP of R&D at eveRAM Technology designing mobile
SDRAM products. He has also held a number of executive and senior
engineering positions at Grandis, Samsung Semiconductor, NeoMagic Corp,
G-Link Technology, and Micron Technology — in addition to being a
co-founder and VP of R&D at Inapac Technology, Inc. Adrian has over 60
US and foreign patents, a diploma in Electrical Engineering from
Singapore Polytechnic, and an MSEE from the University of Arkansas in
Fayetteville.

“With the recent investments and commercial agreements that are
accelerating our ability to bring new MRAM memory solutions to the
market, it was time to add to our executive team and both Antoine and
Adrian bring skill sets that will strengthen our ability to do so,” said
Tom Sparkman, CEO at Spin Memory. “Antoine’s expertise with corporate
financing and strategic vision will allow Spin Memory to improve revenue
streams with its new partners and customers, and Adrian’s deep
experience with developing both DRAM and STT-MRAM products positions him
perfectly to lead Spin’s engineering teams.”

About Spin Memory

Spin Memory, Inc. (formerly Spin Transfer Technologies, Inc.) is the
pre-eminent MRAM IP supplier. Through collaboration with industry
leaders, Spin Memory is transforming the semiconductor industry by
solving memory challenges vital for AI, ADAS, 5G, IoT and more. Spin
Memory’s disruptive STT-MRAM technologies and products provide SRAM-like
speed and endurance that can replace SRAM and ultimately DRAM in both
embedded and stand-alone applications. For more information, please
visit www.spinmemory.com.

Contacts

Justin Gillespie
The Hoffman Agency
(925) 719-1097

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